Infineon Technologies AG has extended its CoolSiC portfolio with the introduction of M1H technology 1,200-V SiC MOSFETs with enhanced features. These devices will be available in Easy modules and ...

Infineon Technologies AG has its expanded CoolSiC portfolio with high-voltage solutions that address 1500-VDC applications such as next-generation photovoltaic, EV charging and energy storage systems.

DG Matrix, the global leader in solid-state transformer solutions, today announced that it will source latest-generation ...

The advanced silicon carbide (SiC) chip will be implemented in a widely extended portfolio that uses the Easy module family, along with discrete packages using .XT interconnect technology. The M1H ...

The devices “raise the benefits available from SiC technology to a new level, which has never before been possible,” says Dr. Helmut Gassel, President of Infineon’s Industrial Power Control Division.

Infineon enters high volume production of a portfolio of 1200 V CoolSiC MOSFET devices. The devices are rated from 30 mΩ to 350 mΩ and implemented into TO247-3 and TO247-4 housings. The expansion ...

Infineon has announced 2kV silicon carbide mosfets and diodes for use in high-power inverters with 1.5kV dc links. “Increasing demand for high power density is pushing developers to adopt 1,500V dc ...

Infineon introduced its first chips made from silicon carbide (SiC) more than 20 years ago and has long touted the material as the future of power electronics. Now a lot more companies are perking up ...

Infineon Technologies, the largest player in the power semiconductor space, has introduced its latest generation of power MOSFETs. The company has started selling the first devices based on its ...