While studying how memories are formed and stored in the brain, a team identified a novel protein folding mechanism that is essential for long term memory storage. The researchers further demonstrated ...

A breakthrough study sheds new light on how brain cells relay critical information from their extremities to their nucleus, leading to the activation of genes essential for learning and memory. A ...

Shanghai-based researchers from Fudan University have achieved a breakthrough in semiconductor technology by developing a picosecond-level flash memory device. This device is said to boast an ...

A new MIT study reveals that encoding memories in engram cells is controlled by large-scale remodeling of the proteins and DNA that make up cells’ chromatin. In this image of the brain, the ...

A neuroscience research team at the University of Iowa has discovered a crucial biochemical mechanism that impacts memory storage. Its research article was published in the journal Science Advances on ...

A research team at Fudan University has built the fastest semiconductor storage device ever reported, a non‑volatile flash memory dubbed “PoX” that programs a single bit in 400 picoseconds ...

Ferroelectric random access memory, or FeRAM, has long promised to offer a low-power alternative to flash computer memory, but its limited endurance cannot offset its deficiency in density such that ...

Much like the end of Moore’s Law, the scaling challenges of flash memory have been a significant issue for several years. Embedded flash memory is reaching its limits as technology nodes for embedded ...

NAND flash memory is everywhereꟷin mobile phones, cameras, solid state drives in computers, and storage drives in data centers. But this technology, first unveiled by Fujio Masuoka of Toshiba in 1987, ...