The 74ABT00 is a quad 2-input NAND gate. This device is fully specified for partial power down applications using Ioff. The Ioff circuitry disables the output, preventing the potentially damaging ...
Two riboswitches were seamlessly linked into a single hybrid construct that functions as a Boolean NAND gate, shutting off gene expression only when both chemical inputs are present simultaneously. A ...
Forward-looking: Building NAND with ferroelectric transistors can dramatically cut power consumption by sidestepping a core limitation of conventional NAND, according to a new study from the Samsung ...
A new technical paper, “Enabling Radiation Hardness in Solid-State NAND Storage Utilizing a Laminated Ferroelectric Stack,” was published by researchers at Georgia Tech. Find the technical paper here.
A new technical paper titled “Concealable physical unclonable functions using vertical NAND flash memory” was published by researchers at Seoul National University and SK hynix. The paper proposes “a ...
The 74AHC00-Q100; 74AHCT00-Q100 is a high-speed Si-gate CMOS device and is pin compatible with Low-power Schottky TTL (LSTTL). It is specified in compliance with JEDEC standard No. JESD7-A. The ...
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