Wolfspeed introduced its Gen 4 SiC MOSFET platform, supporting long-term roadmaps for high-power, application-optimized products. Gen 4 offerings include power modules, discrete components, and bare ...
Compared to traditional silicon, power MOSFETs based on silicon carbide (SiC) can handle higher voltages with lower on-resistance (R DS(on)) and superior thermal conductivity, opening the door to ...
ST has launched its fourth-generation STPOWER SiC MOSFETs, offering smaller size and greater efficiency for future EV traction inverters. Set to be available in 750-V and 1200-V classes, these devices ...
Wide-bandgap (WBG) technologies, such as gallium-nitride (GaN) devices and silicon-carbide (SiC) MOSFETs, have recently made their way to electrified powertrain (e-powertrain) applications. These ...
ST is introducing its fourth generation STPOWER SiC MOSFET techno,ogy which is optimised for traction inverters. Devices will be made available in 750V and 1200V classes bringing the advantages of SiC ...
Bei Anwendungen im niedrigen Frequenzbereich, etwa den Antriebssträngen von E-Fahrzeugen, sind niedrige Leitungsverluste bei geringer Last gefragt. Leistungsmodule mit SiC-MOSFETs erfüllen diese ...
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