TOKYO--(BUSINESS WIRE)-- Mitsubishi Electric Corporation (TOKYO: 6503) announced today that it has developed a new structure for a silicon carbide metal-oxide-semiconductor field-effect transistor ...
These releases underscore NoMIS Power's continued expansion toward higher-voltage and higher-current SiC devices and mark NoMIS' first 1.7 kV SiC MOSFET offering, with high-resistance small-die ...
DUBLIN--(BUSINESS WIRE)--Research and Markets has announced the addition of the "Miscellaneous IGBT vs SiC MOSFET comparison: Structure and Cost Analysis" report to their offering. The report provides ...
DUBLIN--(BUSINESS WIRE)--Research and Markets has announced the addition of the "Wolfspeed C3M900V SiC MOSFET: Structure and Cost Analysis" report to their offering. The SiC C3M Platform is the first ...
In recent years, the proliferation of next-generation electric vehicles (xEVs) has been accelerating the development of smaller, lighter, and more efficient electrical systems. In particular, ...
The 1200-V, 80-milliohm SiC MOSFETS offer high power density with highly efficient operation that can reduce operating costs and overall system size due to smaller footprints, and cut thermal ...
ON Semiconductor has introduced two SiC MOSFETs aimed at EVs, solar and UPS applications. The industrial grade NTHL080N120SC1 and AEC-Q101 automotive grade NVHL080N120SC1 are complemented by SiC ...
The startup company mqSemi has introduced a Singular Point Source MOS (S-MOS) cell design that is suitable for power MOS based devices. Using Silvaco Victory Process and Device Software, the S-MOS ...
Over the years, low losses possible by high breakdown field made silicon carbide (SiC) MOSFETs extremely popular amongst engineers. At present, they are mostly used in areas where IGBTs (Insulated ...
Trench-based silicon carbide power MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors) represent a dramatic improvement in the Figure of Merit (FOM) values of power conversion switching ...
X-FAB has introduced its latest XbloX platform, designed to accelerate the development and production of silicon carbide (SiC) MOSFET technologies. SiC wafers manufactured by X-FAB Credit: X-FAB The ...
GeneSiC Semiconductor of Dulles Virginia, has announced 6.5kV SiC MOSFETs for medium-voltage power conversion applications such as traction, pulsed power and smart grid infrastructure. 6.5kV SiC ...
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