Infineon is sampling an IGBT package which can hold an IGBT up to 120A and a full rated diode in the same footprint and pin-out as JEDEC standard TO-247-3. Volume production is planned for Q1 2015.

Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) has launched a 6.5 kV power module that features IGBT and freewheeling diode functionality integrated into a single chip. This new RCDC (Reverse ...

This two part article compares the switching and conduction loss performance of the latest generation of punch-through (PT) IGBTs with power MOSFETs. Also included is a brief overview of the PT IGBT ...

IGBT, stands for Insulated Gate Bipolar Transistor. It is a bipolar transistor with an insulated gate terminal. It combines a control input with a MOS structure and a bipolar power transistor in a ...

When selecting the appropriate power switches for motor control applications designers are tasked with balancing performance requirements and total system costs. When system costs are the highest ...

ROHM has developed Hybrid IGBTs that come with an integrated 650V SiC Schottky barrier diode, the RGWxx65C series (RGW60TS65CHR, RGW80TS65CHR, RGW00TS65CHR). The devices are qualified under the ...

In the last decade, the automotive electronics industry has been turned upside down. Twenty years ago, the power MOSFET was the predominant component in terms of both socket count and dollar value ...

SUNNYVALE, Calif.--(BUSINESS WIRE)--Fairchild (NASDAQ: FCS), a leading global supplier of high-performance semiconductor solutions, is today expanding its growing portfolio of automotive-grade ...

Over the years, low losses possible by high breakdown field made silicon carbide (SiC) MOSFETs extremely popular amongst engineers. At present, they are mostly used in areas where IGBTs (Insulated ...

SemiSouth, a little-know semiconductor firm from Mississippi, is introducing high-power silicon carbide JFETs to replace silicon IGBTs and silicon mosfets in high power inverters. The firm already ...