Infineon is sampling an IGBT package which can hold an IGBT up to 120A and a full rated diode in the same footprint and pin-out as JEDEC standard TO-247-3. Volume production is planned for Q1 2015.

Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) has launched a 6.5 kV power module that features IGBT and freewheeling diode functionality integrated into a single chip. This new RCDC (Reverse ...

This two part article compares the switching and conduction loss performance of the latest generation of punch-through (PT) IGBTs with power MOSFETs. Also included is a brief overview of the PT IGBT ...

IGBT, stands for Insulated Gate Bipolar Transistor. It is a bipolar transistor with an insulated gate terminal. It combines a control input with a MOS structure and a bipolar power transistor in a ...

ROHM has developed Hybrid IGBTs that come with an integrated 650V SiC Schottky barrier diode, the RGWxx65C series (RGW60TS65CHR, RGW80TS65CHR, RGW00TS65CHR). The devices are qualified under the ...

SUNNYVALE, Calif.--(BUSINESS WIRE)--Fairchild (NASDAQ: FCS), a leading global supplier of high-performance semiconductor solutions, is today expanding its growing portfolio of automotive-grade ...

In the last decade, the automotive electronics industry has been turned upside down. Twenty years ago, the power MOSFET was the predominant component in terms of both socket count and dollar value ...

Fairchild is expanding its portfolio of automotive grade semiconductor solutions for hybrid and electric vehicles with discrete and bare die IGBTs and diodes. The devices are targeted at traction ...

(Image courtesy of Elsevier Publishing). Who else would you want to author a book about the IGBT (insulated gate bipolar transistor) than its inventor, Dr. B. Jayant Baliga? This invention is widely ...

Over the years, low losses possible by high breakdown field made silicon carbide (SiC) MOSFETs extremely popular amongst engineers. At present, they are mostly used in areas where IGBTs (Insulated ...

SemiSouth, a little-know semiconductor firm from Mississippi, is introducing high-power silicon carbide JFETs to replace silicon IGBTs and silicon mosfets in high power inverters. The firm already ...