Frontiers

Advancing ferroelectric and two-dimensional materials for next-generation electronic devices

The field of next-generation electronics is being transformed by the convergence of ferroelectric materials and two-dimensional (2D) semiconductors.
IEEE

Heat-Isolated Organic Field-Effect Transistors With Strong Electrostatic Discharge Tolerance

Abstract: Organic field-effect transistors (OFETs) that are intrinsically flexible are desirable components for wearable electronics. A major challenge for these electronics is electrostatic discharge ...
IEEE

Room Temperature Negative Differential Resistance in Gate-All-Around Field-Effect Transistors With 1D Active Channels

Abstract: We report on the presence of a Negative Differential Resistance (NDR) in a Gate-All-Around Field Effect Transistor (GAAFET) with 1D nanowires or nanotubes as the active conducting channel.