Infineon Technologies AG has extended its CoolSiC portfolio with the introduction of M1H technology 1,200-V SiC MOSFETs with enhanced features. These devices will be available in Easy modules and ...

Infineon Technologies AG has expanded its CoolSiC family with a new line of 650-V SiC MOSFETs in a compact D 2 PAK 7-pin package with .XT interconnection technology. Comprised of 10 new products, ...

The devices “raise the benefits available from SiC technology to a new level, which has never before been possible,” says Dr. Helmut Gassel, President of Infineon’s Industrial Power Control Division.

Silicon carbide (SiC) continues to carve out a place for itself in power electronics after decades of dominance by silicon. SiC-based power switches are becoming the gold standard in the three-phase ...

The advanced silicon carbide (SiC) chip will be implemented in a widely extended portfolio that uses the Easy module family, along with discrete packages using .XT interconnect technology. The M1H ...

Infineon has announced 2kV silicon carbide mosfets and diodes for use in high-power inverters with 1.5kV dc links. “Increasing demand for high power density is pushing developers to adopt 1,500V dc ...

Infineon enters high volume production of a portfolio of 1200 V CoolSiC MOSFET devices. The devices are rated from 30 mΩ to 350 mΩ and implemented into TO247-3 and TO247-4 housings. The expansion ...

Infineon’s latest-generation SiC MOSFETs power DG Matrix’s Interport™ platform, enabling industry-leading efficiency and power density for AI data center and electrification deployments MORRISVILLE, N ...

Infineon introduced its first chips made from silicon carbide (SiC) more than 20 years ago and has long touted the material as the future of power electronics. Now a lot more companies are perking up ...